A group of researchers from China, led by Professor Han Zhang from Shenzhen University, Professor Xue-Feng Yu from the Chinese Academy of Science, and Professor Lei Liao from Wuhan University, reported a breakthrough in metal-ion-modified black phosphorus with enhanced stability and transistor performance. By modifying BP with metal ions solved the its instability problem, which hindered the practical application of BP in electronics and optoelectronics; while at the same time further enhancing the original superior transport properties. The researchers conclude that this new method will enhance both the stability and transistor performance of BP. This may lead to better performance of electronic and optoelectronic devices. For the full article, please visit: https://www.nanowerk.com/spotlight/spotid=49599.php