Deposition

NDS possesses the deposition capabilities for semiconductor, dielectric, and conductive thin films (amorphous, nanocrystalline and poly-Si, SiOx, SiNx, SiOxNy, SiC, SiCN, ITO, ZnO, Al, Cr, Mo, W, Ta, organic materials (both small molecule and polymers). The maximum substrate size varies from 3 to 6 inches. Our deposition equipment supports ALD, PECVD, LPCVD, and PVD technologies that allows for controlled and uniform deposition of thin films.

Etching

Etching selectively removes materials from the surface of the nanodevice to create topographical features by utilizing liquid chemicals or gaseous physico-chemical processes, also commonly known as wet etching and dry etching respectively. We offer both wet and dry etching (F-based, O-based, and Cl-based dry etching (RF,ICP)) services supporting RIE, ion milling, O2 plasma and wet processing technologies.

Lithography and Patterning

UV and electron-beam technologies are utilized to fabricate patterns into substrate material. UV lithography generates a desired pattern on the substrate’s surface through exposure to UV light, while electron-beam lithography utilizes an electron beam to scan a material and form the desired pattern.

Characterization

NDS boasts a wide variety of characterization equipment including surface profiling, sheet resistance and thin film stress measurement, ellipsometry, as well as SEM and AFM microscopy to measure surface characteristics for materials such as semiconductor wafers, lithography masks, magnetic media, CDs/DVDs, biomaterials, optics, and other samples up to 200 mm in diameter.